Submicron trenching of semiconductor nanostructuresLEE, K. Y; SMITH, T. P; FORD, C. J. B et al.Applied physics letters. 1989, Vol 55, Num 7, pp 625-627, issn 0003-6951, 3 p.Article

Review of analytical models for the study of highly doped regions of silicon devicesCUEVAS, A; BALBUENA, M. A.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 3, pp 553-560, issn 0018-9383, 8 p.Article

Selected Papers from ISDRS 2011AKTURK, Akin; ILIADIS, Agis A.Solid-state electronics. 2012, Vol 78, issn 0038-1101, 169 p.Conference Proceedings

23rd European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2012)MENEGHESSO, G; CIAPPA, M; COVA, P et al.Microelectronics and reliability. 2012, Vol 52, Num 9-10, issn 0026-2714, 777 p.Conference Proceedings

NUMERICAL MODELING OF POWER MOSFETSNAVON DH; WANG CT.1983; SOLID-STATE ELECTRONICS; ISSN 0038-1101; GBR; DA. 1983; VOL. 26; NO 4; PP. 287-290; BIBL. 13 REF.Article

Phase noise calculation and variability analysis of RFCMOS LC oscillator based on physics-based mixed-mode simulationHONG, Sung-Min; OH, Yongho; KIM, Namhyung et al.Solid-state electronics. 2013, Vol 79, pp 152-158, issn 0038-1101, 7 p.Article

A design model for surface-termination optimization of off-state semiconductor devicesWADDELL, J. B; MIDDLETON, J; BOARD, K et al.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 5, pp 943-953, issn 0018-9383, 11 p.Article

Nonpolar and Semipolar Group III Nitride-Based MaterialsSPECK, J. S; CHICHIBU, S. F.MRS bulletin. 2009, Vol 34, Num 5, issn 0883-7694, [49 p.]Serial Issue

Noise in devices and circuits II (Maspalomas, 26-28 May 2004)Danneville, François; Bonani, Fabrizio; Deen, M. Jamal et al.SPIE proceedings series. 2004, isbn 0-8194-5396-X, XXXI, 588 p, isbn 0-8194-5396-XConference Proceedings

High-rare deposition of hydrogenated amorphous silicon films and devicesLUFT, W.Applied physics communications. 1988, Vol 8, Num 4, pp 239-298, issn 0277-9374Article

The ROCS Workshop and 25 years of compound semiconductor reliabilityROESCH, William J.Microelectronics and reliability. 2011, Vol 51, Num 2, pp 188-194, issn 0026-2714, 7 p.Conference Paper

Analytical two-dimensional model for minority-carrier diffusion from small-geometry pn junctionSTROLLO, A. G. M; SPIRITO, P.Electronics Letters. 1989, Vol 25, Num 2, pp 130-131, issn 0013-5194, 2 p.Article

A Probe-Lift MOS-Capacitor Technique for Measuring Very Low Oxide Leakage Currents and Their Effect on Generation Lifetime ExtractionMARINELLA, Matthew. J; SCHRODER, Dieter K; CHUNG, Gilyong Y et al.I.E.E.E. transactions on electron devices. 2008, Vol 55, Num 2, pp 565-571, issn 0018-9383, 7 p.Article

Evaluation of thermal performance of all-GaN power module in parallel operationCHOU, Po-Chien; STONE CHENG; CHEN, Szu-Hao et al.Applied thermal engineering. 2014, Vol 70, Num 1, pp 593-599, issn 1359-4311, 7 p.Article

Source/drain engineering for MOSFETs with embedded-Si:C technologyITOKAWA, Hiroshi; YASUTAKE, Nobuaki; KUSUNOKI, Naoki et al.Applied surface science. 2008, Vol 254, Num 19, pp 6135-6139, issn 0169-4332, 5 p.Conference Paper

Wearout estimation using the Robustness Validation methodology for components in 150°C ambient automotive applicationsLECUYER, P; FREMONT, H; LANDESMAN, J.-P et al.Microelectronics and reliability. 2010, Vol 50, Num 9-11, pp 1744-1749, issn 0026-2714, 6 p.Conference Paper

Features of new laser micro-via organic substrate for semiconductor packageTSUKADA, Yutaka; YAMANAKA, Kimihior; KODAMA, Yasushi et al.Electrochimica acta. 2003, Vol 48, Num 20-22, pp 2997-3003, issn 0013-4686, 7 p.Conference Paper

Environmental impacts of microchip manufactureWILLIAMS, Eric D.Thin solid films. 2004, Vol 461, Num 1, pp 2-6, issn 0040-6090, 5 p.Conference Paper

Integrating semiconductor device characterisation and reliability into electrical engineering educationYUAN, Jiann S; HONG YANG.International journal of electrical engineering education. 2006, Vol 43, Num 1, pp 67-79, issn 0020-7209, 13 p.Article

30 Years of accomplishments in compound semiconductor materials and devices attributable to Prof. Lester F. EastmanYODER, Max N.IEEE Lester Eastman conference on high performance devices. 2002, pp 34-39, isbn 0-7803-7478-9, 6 p.Conference Paper

Improved Calculation of Charge Collection Probability From Within the Junction WellONG, Vincent K. S; TAN, Chee Chin; KUMIAWAN, Oka et al.I.E.E.E. transactions on electron devices. 2011, Vol 58, Num 12, pp 4434-4437, issn 0018-9383, 4 p.Article

Three decades of our graduate research and education in compound semiconductor materials and devicesEASTMAN, Lester F.IEEE Lester Eastman conference on high performance devices. 2002, pp 4-9, isbn 0-7803-7478-9, 6 p.Conference Paper

21st European Symposium on the RELIABILITY OF ELECTRON DEVICES, FAILURE PHYSICS AND ANALYSIS (ESREF 2010)BUSATTO, Giovanni; IANNUZZO, Francesco.Microelectronics and reliability. 2010, Vol 50, Num 9-11, issn 0026-2714, 732 p.Conference Proceedings

Improved radiation hardness of mos devices with ultrathin nitrided oxide gate dielectrics prepared by rapid thermal processingLO, G. Q; SHIH, D. K; TING, W. C et al.Electronics Letters. 1989, Vol 25, Num 13, pp 812-813, issn 0013-5194, 2 p.Article

Room-temperature operation of AIGaAs/GaAs resonant tunnelling structures grown by metalorganic vapour-phase epitaxySCHNELL, R. D; TEWS, H; NEUMANN, R et al.Electronics Letters. 1989, Vol 25, Num 13, pp 830-831, issn 0013-5194, 2 p.Article